Silicon nitride and oxide dry etching

[Annabelle Gascon]

Hi,

my sample is composed of 3 layers of 200 nm : low stress silicon nitride /
annealed silicon oxide / low stress silicon nitride. I want to etch those
layers in one step with using reactive ion etching. The resist I'm using is
ZEP520A (300nm thick). The chemistry is based on CHF3, CF4 and Ar, but the
etch rate of SiN and SiO2 is to slow compare to the etch rate of ZEP
resist. Does anyone has a recipe for silicon nitride and/or silicon oxide
etching that is selective to resist ?

Thank you for your help,

Annabelle Gascon
master student, École Polytechnique de Montréal
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[onny setya]

hi Annabelle,

we used CHF3 and Ar for etching of SiO2/Si3N4, AZ1518 of 1.8µm in thickness was used as etch mask; adding SF6 is also okay to increase the etch rate.The selectivity was around 3-4 ( if SF6 is added the selectivity ´s getting a bit higher).

regards,Onny
University of Kassel
D-34132 Kassel,Germany

Date: Mon, 11 Jan 2010 11:53:37 -0500
Subject: [mems-talk] Silicon nitride and oxide dry etching
Hi,
my sample is composed of 3 layers of 200 nm : low stress silicon nitride /
annealed silicon oxide / low stress silicon nitride. I want to etch those
layers in one step with using reactive ion etching. The resist I'm using is
ZEP520A (300nm thick). The chemistry is based on CHF3, CF4 and Ar, but the
etch rate of SiN and SiO2 is to slow compare to the etch rate of ZEP
resist. Does anyone has a recipe for silicon nitride and/or silicon oxide
etching that is selective to resist ?
Thank you for your help,
Annabelle Gascon
master student, École Polytechnique de Montréal

_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community? See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk