is_bajpayee
2006-11-01 06:06:37 UTC
Dear friends
I have a peculiar problem of etching of Silicon using TMAH without at all affecting the patterned Nickel on oxide.
Nickel ( thermally evoporated for thickness of 800A) is patterened with PR and lithography on the SiO2/si, etching of the exopsed Si using TMAH ( 10%wt, 80C) has to carried out. Now i would like to know that how the Nickel film will be affected by this solution and what will be the characteristics of the the etching. i tried the same with KOH at room tempearture and there is negligible etching of nickel for a long time.
any suggestions will be highly appreciated.
thank you
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org
Want to advertise to this community? See http://www.memsnet.org
To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
I have a peculiar problem of etching of Silicon using TMAH without at all affecting the patterned Nickel on oxide.
Nickel ( thermally evoporated for thickness of 800A) is patterened with PR and lithography on the SiO2/si, etching of the exopsed Si using TMAH ( 10%wt, 80C) has to carried out. Now i would like to know that how the Nickel film will be affected by this solution and what will be the characteristics of the the etching. i tried the same with KOH at room tempearture and there is negligible etching of nickel for a long time.
any suggestions will be highly appreciated.
thank you
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org
Want to advertise to this community? See http://www.memsnet.org
To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk